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the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with the RoHS standard.
CDM4628/CYTM4
CDM4630/CYTM4
CDM4620/CYTM4
CDM4644/CYTM4
CDM4650/CYTM4
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